What gases are used to dry etch?

Published by Anaya Cole on

What gases are used to dry etch?

The selectivity and etch rate depend very strong on the process gases. For silicon and silicon compounds fluorine and chlorine gases are used primarily.

Which is better wet etching or dry etching?

Dry etching employs chemicals in the gaseous phase, whereas wet etching uses chemicals in the liquid phase. Wet etching techniques have the advantages of being quick and having high etch rates. High selectivity can be achieved using simple equipment baths or wet chemical sprays.

What is poly etch?

POLY_ETCH_2 is a recipe designed for etching polysilicon in the LAM 9400. It works well for etching polysilicon and N-type single crystal silicon, where as with P-type wafers it can cause micro-pitting.

What is Microetching?

a method of roughening the surface of a natural tooth or a dental restoration using a gas-impelled jet of fine abrasive.

What is dielectric etch?

Dielectric etch removes insulating films, which tend to have stronger atomic bonds and require higher energies. Both typically employ reactive ion etch in which reactive chemistries and high-energy ions bombard the wafer surface to create holes, lines, and shapes.

What can I use instead of ferric chloride?

What are some substitutes for alum and ferric chloride? Substitutes include other aluminum and iron salts, like sodium aluminate and ferric sulfate, but these may or may not work. Proprietary products, instead of commodities, may offer a better solution.

What is dry etching?

• What is dry etching? – Material removal reactions occur in the gas phase. • Types of dry etching – Non-plasma based dry etching – Plasma based dry etching

Is there a dry etching method for titanium nitride?

The dry etching of titanium nitride has been studied in fluorine containing glow discharges. Untreated samples are covered by an oxidized layer of titanium oxide and/or oxynitride.

What is non-plasma based dry etching?

Non-plasma Based Dry Etching • Isotropic etching of Si • Typically fluorine-containing gases (fluorides or interhalogens) that readily etch Si • High selectivity to masking layers • No need for plasma processing equipment • Highly controllable via temperature and partial pressure of reactants Xenon Difluoride (XeF2) Etching

What is the surface roughness of the materials used in etching?

• Surface roughness: ~40 to 150 nm •M SO:kissa2, Si3N4, PR, Al, Cu, Au, and Ni Plasma Based Dry Etching

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